| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Supplier Device Package | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVMFS6H818NLT1G is a power MOSFET designed for efficient power management applications. This N-Channel MOSFET features a maximum drain-to-source voltage (Vds) of 80V and a low on-resistance of 3.2mOhm at 20A and 10V gate-to-source voltage. It can handle a continuous drain current of up to 135A when measured at the case temperature (Tc = 25°C) and 22A when measured at the ambient temperature (Ta = 25°C).
Designed for compact applications, the NVMFS6H818NLT1G comes in a small 5x6mm DFN package, specifically an 8-PowerTDFN with 5 leads. This surface-mount device operates within a wide temperature range of -55°C to 175°C (TJ). Its features include low Rds(on) to minimize conduction losses and low gate charge (Qg) to reduce driver losses, making it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the NVMFS6H818NLT1G is 80V.
The Rds(on) is a maximum of 3.2mOhm at 20A and 10V Vgs.
The continuous drain current is 135A at Tc=25°C and 22A at Ta=25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The NVMFS6H818NLT1G is supplied in an 8-PowerTDFN, 5-lead package.
Yes, the NVMFS6H818NLT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.