| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
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The ON Semiconductor NVMFS6H801NWFT1G is a single N-Channel MOSFET designed for power applications. It features a drain-to-source voltage of 80V and a continuous drain current of up to 157A at 25°C case temperature, and 23A at 25°C ambient temperature.
This MOSFET boasts a low on-resistance of 2.8mOhm at 50A and 10V drive voltage, minimizing conduction losses. It also offers low gate charge and capacitance, reducing driver losses. The device operates within a temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS6H801NWFT1G is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. The device is also Pb-Free and RoHS compliant.
Key electrical characteristics include an input capacitance of 4120 pF at 40V and a gate charge of 64 nC at 10V. Power dissipation is rated at 166W (Tc) and 3.8W (Ta) at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device supports an operating drain-to-source voltage of 80V.
It is packaged in an 8-PowerTDFN, 5-lead surface-mount package.
The maximum continuous drain current is 23A at 25°C.
The maximum Rds On is 2.8 milliohm at 50A and 10V.
-55°C to 175°C.
RoHS3 compliance status is unverified.