NVMFS6H801NT3G The ON Semiconductor NVMFS6H801NT3G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 157A. It features low Rds(on) and is housed in a compact 5x6mm DFN package.
Mfr Part #:

NVMFS6H801NT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H801NT3G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 157A. It features low Rds(on) and is housed in a compact 5x6mm DFN package.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.67

NVMFS6H801NT3G Available from 1 distributor

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✓ Non-Authorised
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NVMFS6H801NT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H801NT3G Description

Short technical summary and product information.

This N-Channel MOSFET, part number NVMFS6H801NT3G from ON Semiconductor, is designed for power applications requiring high efficiency and a small footprint. It boasts a drain-to-source voltage (Vds) of 80V and can handle a continuous drain current of up to 157A at case temperature.

 

The device offers a low on-resistance (Rds(on)) of 2.8mOhm at 50A and 10V gate drive, minimizing conduction losses. Key electrical characteristics include an input capacitance (Ciss) of 4120pF at 40V and a gate charge (Qg) of 64nC at 10V, contributing to reduced driver losses.

 

With an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. It is packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package, ideal for compact designs. The device is AEC-Q101 qualified and RoHS compliant.

 

Thermal performance is supported by a junction-to-case thermal resistance of 0.9°C/W and a junction-to-ambient thermal resistance of 39°C/W when mounted on a standard FR4 board.

NVMFS6H801NT3G Quick Information

Product Type: MOSFET
Series: NVMFS6H801NT3G
Canonical Name: NVMFS6H801NT3G N-Channel MOSFET
Subcategory: Single

NVMFS6H801NT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H801NT3G Estimated Pricing

Qty Low High
1+ $0.67 $0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H801NT3G Features

  • 80V drain-to-source voltage rating.
  • 157A continuous drain current capability.
  • Low 2.8mOhm Rds(on) at 10V gate drive.
  • Compact 5x6mm DFN surface mount package.
  • Wide -55°C to 175°C operating temperature.

NVMFS6H801NT3G Applications

  • Used in high-current power switching circuits
  • Suitable for automotive and industrial applications
  • Ideal for compact power supply designs
  • Applicable in motor control modules

NVMFS6H801NT3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS6H801NT3G?

The drain-to-source voltage (Vds) is 80V.

What is the continuous drain current for the NVMFS6H801NT3G?

The continuous drain current is 157A at case temperature and 23A at ambient temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 2.8mOhm when measured at 50A drain current and 10V gate voltage.

What is the operating temperature range for the NVMFS6H801NT3G?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H801NT3G supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).

Is the NVMFS6H801NT3G RoHS compliant?

Yes, the device is RoHS3 compliant.

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