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NVMFS6H801NT1G The ON Semiconductor NVMFS6H801NT1G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of up to 157A. It features low Rds(on) and is housed in a compact 5x6mm DFN package.
Mfr Part #:

NVMFS6H801NT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS6H801NT1G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of up to 157A. It features low Rds(on) and is housed in a compact 5x6mm DFN package.
✓ Total Stock: 14,907 pcs
$ Price Range: $0.99

NVMFS6H801NT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
13,500 pcs
On Request
13500 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,407 pcs
On Request
1407 pcs On Request 1 On Request On Request On Request On Request On Request
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NVMFS6H801NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVMFS6H801NT1G Description

Short technical summary and product information.

The NVMFS6H801NT1G is a power MOSFET from ON Semiconductor designed for efficient power management applications. This N-Channel device offers a drain-to-source voltage (Vdss) of 80V and can handle a continuous drain current of up to 157A at 25°C case temperature, or 23A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 2.8mOhm at 50A and 10V gate drive voltage, minimizing conduction losses. The gate charge (Qg) is 64nC at 10V, contributing to reduced driver losses. It operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-PowerTDFN, 5-Lead (5x6mm) surface-mount configuration, the NVMFS6H801NT1G is suitable for designs requiring a small footprint. The device is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1.

NVMFS6H801NT1G Quick Information

Product Type: MOSFET
Series: NVMFS6H801NT1G
Canonical Name: NVMFS6H801NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H801NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H801NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H801NT1G Features

  • 80V drain-to-source voltage rating.
  • 157A maximum continuous drain current.
  • Low 2.8mOhm Rds(on) at 10V.
  • Compact 5x6mm DFN surface mount package.
  • Wide -55°C to 175°C operating temperature.

NVMFS6H801NT1G Applications

  • Power supply switching applications.
  • Motor control circuits.
  • High current switching tasks.
  • Compact electronic designs.

NVMFS6H801NT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H801NT1G?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the continuous drain current rating?

The continuous drain current is 157A at 25°C case temperature and 23A at 25°C ambient temperature.

What is the Rds(on) of the NVMFS6H801NT1G?

The Rds(on) is a maximum of 2.8mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H801NT1G in?

It is in an 8-PowerTDFN, 5-Lead (5x6mm) package and is surface mountable.

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