NVMFS6H801NLT1G The On Semiconductor NVMFS6H801NLT1G is an N-Channel MOSFET designed for power applications. It offers 80V drain-to-source voltage and high current handling capabilities.
Mfr Part #:

NVMFS6H801NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS6H801NLT1G is an N-Channel MOSFET designed for power applications. It offers 80V drain-to-source voltage and high current handling capabilities.
✓ Total Stock: 31,500 pcs
$ Price Range: $0.99

NVMFS6H801NLT1G Available from 1 distributor

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✓ Non-Authorised
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31,500 pcs
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NVMFS6H801NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H801NLT1G Description

Short technical summary and product information.

The NVMFS6H801NLT1G from On Semiconductor is a high-performance N-Channel MOSFET. It features a drain-to-source voltage (Vdss) of 80V and a maximum continuous drain current of 160A when measured at the case temperature (Tc) of 25°C, and 24A at an ambient temperature (Ta) of 25°C.

 

This MOSFET boasts a low on-resistance (Rds On) of 2.7mOhm at 10V Vgs and 50A Id, minimizing conduction losses. Its gate charge (Qg) is 90nC at 10V Vgs, and input capacitance (Ciss) is 5126pF at 40V Vds. The device operates within a wide temperature range of -55°C to +175°C.

 

Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS6H801NLT1G is suitable for compact designs. It is AEC-Q101 qualified and RoHS compliant, making it a reliable choice for various automotive and industrial applications requiring efficient power switching.

NVMFS6H801NLT1G Quick Information

Product Type: MOSFET
Series: NVMFS6H801NLT1G
Canonical Name: NVMFS6H801NL N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H801NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFS6H801NLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H801NLT1G Features

  • 80V drain-to-source voltage rating.
  • High continuous drain current.
  • Low on-resistance for efficiency.
  • Wide operating temperature range.
  • Compact 5x6mm surface-mount DFN package.

NVMFS6H801NLT1G Applications

  • Suitable for automotive applications.
  • Ideal for power switching circuits.
  • Used in compact electronic designs.
  • Efficient power management solutions.

NVMFS6H801NLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NVMFS6H801NLT1G?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum continuous drain current for the NVMFS6H801NLT1G?

The maximum continuous drain current is 160A at TC = 25°C and 24A at TA = 25°C.

What is the on-resistance (Rds On) of the NVMFS6H801NLT1G?

The on-resistance is a maximum of 2.7mOhm at 10V Vgs and 50A Id.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS6H801NLT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package.

Is the NVMFS6H801NLT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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