| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,500 pcs
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31500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS6H801NLT1G from On Semiconductor is a high-performance N-Channel MOSFET. It features a drain-to-source voltage (Vdss) of 80V and a maximum continuous drain current of 160A when measured at the case temperature (Tc) of 25°C, and 24A at an ambient temperature (Ta) of 25°C.
This MOSFET boasts a low on-resistance (Rds On) of 2.7mOhm at 10V Vgs and 50A Id, minimizing conduction losses. Its gate charge (Qg) is 90nC at 10V Vgs, and input capacitance (Ciss) is 5126pF at 40V Vds. The device operates within a wide temperature range of -55°C to +175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS6H801NLT1G is suitable for compact designs. It is AEC-Q101 qualified and RoHS compliant, making it a reliable choice for various automotive and industrial applications requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80V.
The maximum continuous drain current is 160A at TC = 25°C and 24A at TA = 25°C.
The on-resistance is a maximum of 2.7mOhm at 10V Vgs and 50A Id.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package.
Yes, the device is RoHS3 Compliant.