NVMFS6H800NWFT1G The On Semiconductor NVMFS6H800NWFT1G is an 80V N-Channel MOSFET. It offers low Rds(on) and high current handling capabilities in a compact DFN package.
Mfr Part #:

NVMFS6H800NWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS6H800NWFT1G is an 80V N-Channel MOSFET. It offers low Rds(on) and high current handling capabilities in a compact DFN package.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NVMFS6H800NWFT1G Available from 1 distributor

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NVMFS6H800NWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H800NWFT1G Description

Short technical summary and product information.

The On Semiconductor NVMFS6H800NWFT1G is a power MOSFET designed for efficient power management applications. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of up to 203A at 25°C case temperature, and 28A at 25°C ambient temperature. Its low on-resistance (Rds(on)) of 2.1mOhm at 50A and 10V drive voltage minimizes conduction losses, contributing to overall system efficiency.

 

With a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 330µA, this MOSFET offers good control characteristics. The input capacitance (Ciss) is 5530pF at 40V, and the gate charge (Qg) is 85nC at 10V, which helps in minimizing driver losses.

 

The device operates across a wide temperature range from -55°C to 175°C (TJ). It is housed in a compact 5x6mm 8-PowerTDFN, 5-lead package, suitable for surface mounting. This package provides excellent thermal performance, with a junction-to-case thermal resistance of 0.75°C/W, allowing for high power dissipation of up to 200W at 25°C case temperature.

 

The NVMFS6H800NWFT1G is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding automotive and industrial applications. It is also Pb-free and RoHS compliant.

NVMFS6H800NWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS6H800NWFT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS6H800NWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFS6H800NWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H800NWFT1G Features

  • 80V drain-to-source voltage rating.
  • High continuous drain current.
  • Low on-resistance for efficiency.
  • Compact 5x6mm DFN package.
  • AEC-Q101 qualified for reliability.

NVMFS6H800NWFT1G Applications

  • Suitable for power switching circuits.
  • Used in automotive applications.
  • Ideal for high-efficiency designs.
  • Compact designs requiring small footprint.

NVMFS6H800NWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H800NWFT1G?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the continuous drain current at 25°C case temperature?

The continuous drain current (Id) at 25°C case temperature is 203A.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 2.1mOhm when tested at 50A and 10V.

What is the operating temperature range for the NVMFS6H800NWFT1G?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMFS6H800NWFT1G supplied in?

It is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting.

Is the NVMFS6H800NWFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1.

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