NVMFS6H800NLT1G The On Semiconductor NVMFS6H800NLT1G is an N-Channel MOSFET designed for power applications. It features a high continuous drain current of 224A and a low on-resistance of 1.9mOhm at 10V.
Mfr Part #:

NVMFS6H800NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS6H800NLT1G is an N-Channel MOSFET designed for power applications. It features a high continuous drain current of 224A and a low on-resistance of 1.9mOhm at 10V.
✓ Total Stock: 1,500 pcs
$ Price Range: $0.99

NVMFS6H800NLT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFS6H800NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS6H800NLT1G Description

Short technical summary and product information.

The NVMFS6H800NLT1G from On Semiconductor is a high-performance N-Channel MOSFET. It is designed with a small footprint, measuring 5x6mm in a DFN package, making it suitable for compact designs.

 

Key electrical characteristics include a Drain-to-Source Voltage (Vdss) of 80V and a maximum continuous drain current of 224A at 25°C case temperature. The device boasts a low on-resistance (Rds(on)) of 1.9mOhm at a gate-source voltage of 10V, which helps minimize conduction losses. It also features low gate charge (Qg) and capacitance, contributing to reduced driver losses.

 

This MOSFET is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding automotive and industrial applications. It operates within a wide temperature range of -55°C to 175°C.

 

The surface-mount DFN package (5-DFN 5x6) requires appropriate PCB layout for optimal thermal performance, with a junction-to-case thermal resistance of 0.7°C/W.

NVMFS6H800NLT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: FETs

NVMFS6H800NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS6H800NLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS6H800NLT1G Features

  • 80V Drain-to-Source Voltage capability.
  • 224A maximum continuous drain current.
  • Low 1.9mOhm on-resistance at 10V.
  • Compact 5x6mm DFN surface mount package.
  • AEC-Q101 Qualified for reliability.

NVMFS6H800NLT1G Applications

  • Suitable for compact power designs.
  • Minimizes conduction losses effectively.
  • Reduces driver circuit losses.
  • Ideal for automotive applications.
  • Enables efficient power management.

NVMFS6H800NLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS6H800NLT1G?

The maximum drain-to-source voltage (Vds) is 80V.

What is the maximum continuous drain current of the NVMFS6H800NLT1G?

The maximum continuous drain current is 224A at 25°C case temperature and 30A at 25°C ambient temperature.

What is the on-resistance of the NVMFS6H800NLT1G?

The on-resistance (Rds(on)) is a maximum of 1.9mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMFS6H800NLT1G supplied in?

It is supplied in a 5-DFN (5x6) package, suitable for surface mounting.

Is the NVMFS6H800NLT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS6H800NLT1G?

The Moisture Sensitivity Level is 1 Unlimited.

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