| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFS6B85NLT1G from On Semiconductor is a single N-Channel Power MOSFET with a drain-to-source voltage rating of 100V. It offers a low on-resistance of 46mOhm at 10A and 10V gate drive, minimizing conduction losses. The continuous drain current is rated at 19A under case temperature conditions and 5.6A under ambient conditions.
This MOSFET is designed for compact applications, featuring a small 5x6mm footprint in an 8-PowerTDFN package. It boasts low gate charge and capacitance, contributing to reduced driver losses. The device is AEC-Q101 qualified and PPAP capable, making it suitable for demanding applications. It operates within a junction temperature range of -55°C to +175°C.
Key electrical characteristics include a gate threshold voltage of 2.4V at 250µA and a maximum gate-to-source voltage of ±16V. The device also has a pulsed drain current capability of 93A. Thermal performance is supported by a junction-to-case thermal resistance of 3.6°C/W and a junction-to-ambient thermal resistance of 43°C/W.
The NVMFS6B85NLT1G is Pb-Free and RoHS compliant. It is supplied in a surface-mount 8-PowerTDFN, 5-lead package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum on-resistance (Rds(on)) is 46mOhm at 10A and 10V.
The continuous drain current is 19A when measured at the case temperature of 25°C and 5.6A when measured at an ambient temperature of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the device is AEC-Q101 Qualified and PPAP Capable.