| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,500 pcs
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19500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFS5H663NLWFT1G is a single N-Channel MOSFET from ON Semiconductor, designed for efficient power management. It offers a drain-to-source voltage of 60V and a low on-resistance of 7.2 mOhm at 20A and 10V Vgs, minimizing conduction losses.
This MOSFET boasts a continuous drain current rating of 67A at 25°C case temperature and 16.2A at 25°C ambient temperature, with a maximum power dissipation of 63W (Tc) or 3.7W (Ta). Its low gate charge (Qg) and capacitance contribute to reduced driver losses, making it suitable for various switching applications.
The device operates within a wide temperature range of -55°C to 175°C (TJ) and comes in a compact 5x6mm 8-PowerTDFN, 5-lead package (5-DFN (5x6) (8-SOFL)). It is surface-mount compatible and features wettable flanks for enhanced optical inspection.
This MOSFET is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. It is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 67A when measured at the case temperature of 25°C, and 16.2A when measured at an ambient temperature of 25°C.
The Rds On is a maximum of 7.2mOhm at 20A and 10V Vgs, and a maximum of 10mOhm at 4.5V Vgs.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) configuration.
Yes, the device is Pb-free and RoHS compliant.