Mfr Part #:

NVMFS5H663NLT1G

The On Semiconductor NVMFS5H663NLT1G is an N-Channel MOSFET with a 60V drain-to-source voltage. It offers a low Rds(on) of 7.2mOhm at 20A, 10V and is housed in a compact 5x6mm DFN package.

✓ Total Stock: 3,000 pcs

$ Price Range: $1.26

NVMFS5H663NLT1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVMFS5H663NLT1G Description

Short technical summary and product information.

This N-Channel MOSFET from On Semiconductor, part number NVMFS5H663NLT1G, is designed for power applications requiring efficient switching. It features a maximum drain-to-source voltage (Vds) of 60V and can handle continuous drain currents of up to 67A at case temperature and 16.2A at ambient temperature.

The MOSFET boasts a low on-resistance (Rds(on)) of 7.2mOhm at 20A and 10V gate-to-source voltage, minimizing conduction losses. Its gate charge (Qg) is 17nC at 10V, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.

Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS5H663NLT1G is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. The device is also Pb-Free and RoHS Compliant.

NVMFS5H663NLT1G Quick Information

Product Type: MOSFET

Series: NVMFS5H663NLT1G

Canonical Name: N-Channel MOSFET

Subcategory: Single

NVMFS5H663NLT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVMFS5H663NLT1G Estimated Pricing

Qty	Low	High
1+	$1.26	$1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5H663NLT1G Features

60V drain-to-source voltage rating.
Low 7.2mOhm Rds(on) at 20A.
High 67A continuous drain current.
Compact 5x6mm DFN package.
AEC-Q101 Qualified and PPAP Capable.

NVMFS5H663NLT1G Applications

Suitable for power management circuits.
Ideal for high-current switching applications.
Designed for compact electronic devices.
Automotive applications due to qualification.

NVMFS5H663NLT1G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage of the NVMFS5H663NLT1G MOSFET?

The drain-to-source voltage (Vds) is 60V.

What is the maximum continuous drain current for the NVMFS5H663NLT1G?

The maximum continuous drain current is 67A at case temperature and 16.2A at ambient temperature.

What is the on-resistance (Rds On) of the NVMFS5H663NLT1G?

The Rds On is a maximum of 7.2mOhm at 20A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS5H663NLT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) configuration.

Is the NVMFS5H663NLT1G RoHS compliant?

Yes, the device is Pb-Free and RoHS Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	67 A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1131 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	63 W (Tc)
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Supplier Package	5-DFN (5x6) (8-SOFL)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2V