NVMFS5H610NLWFT1G The ON Semiconductor NVMFS5H610NLWFT1G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a continuous drain current of up to 48A.
Mfr Part #:

NVMFS5H610NLWFT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS5H610NLWFT1G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a continuous drain current of up to 48A.
✓ Total Stock: 13,000 pcs
$ Price Range: $0.75

NVMFS5H610NLWFT1G Available from 2 distributors

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✓ Non-Authorised
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12,000 pcs
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NVMFS5H610NLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5H610NLWFT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS5H610NLWFT1G is a high-performance N-Channel MOSFET suitable for various power switching applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current rating of 48A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance (Rds) of 10mOhm at 8A and 10Vgs, minimizing conduction losses. The gate charge (Qg) is 13.7nC maximum at 10Vgs, contributing to reduced driver losses. It operates within a wide temperature range of -55°C to 175°C (TJ).

 

The device is housed in a compact 8-PowerTDFN, 5-Lead (5x6) surface mount package, facilitating space-constrained designs. It is AEC-Q101 qualified and RoHS compliant, ensuring reliability and adherence to environmental standards.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2V at 40µA. The input capacitance (Ciss) is 880pF maximum at 30Vds.

NVMFS5H610NLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5H610NLWFT1G N-Channel Power MOSFET
Subcategory: N-Channel

NVMFS5H610NLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFS5H610NLWFT1G Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5H610NLWFT1G Features

  • 60V drain-to-source voltage rating.
  • 48A continuous drain current capability.
  • Low 10mOhm Rds(on) at 10Vgs.
  • Compact 8-PowerTDFN surface mount package.
  • AEC-Q101 qualified and RoHS compliant.

NVMFS5H610NLWFT1G Applications

  • Suitable for power switching applications.
  • Designed for compact electronic systems.
  • Used in applications requiring low conduction loss.
  • Ideal for circuits with reduced driver losses.

NVMFS5H610NLWFT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS5H610NLWFT1G?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current is 48A when measured at the case temperature of 25°C, and 13A when measured at an ambient temperature of 25°C.

What is the maximum on-resistance (Rds) for this MOSFET?

The maximum on-resistance is 10mOhm at a gate-source voltage of 10V and a drain current of 8A.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What type of package is the NVMFS5H610NLWFT1G in?

It is supplied in an 8-PowerTDFN, 5-Lead (5x6) package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

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