| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,970 pcs
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5970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5H610NLT1G from On Semiconductor is a power MOSFET designed for efficient switching applications. This N-Channel device offers a 60V drain-to-source voltage and can handle a continuous drain current of up to 48A when measured at the case temperature of 25°C, and 13A when measured at an ambient temperature of 25°C.
Key electrical characteristics include a low on-resistance of 10mOhm at 8A and 10V gate-source voltage, minimizing conduction losses. The gate threshold voltage is 2V at 40µA, and the maximum gate-source voltage is ±20V. Input capacitance (Ciss) is rated at 880pF at 30V, and gate charge (Qg) is 13.7nC at 10V.
This MOSFET is housed in a compact 5x6mm DFN package (8-PowerTDFN, 5 Leads), suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ). The device is specified with a maximum power dissipation of 52W at 25°C case temperature and 3.6W at 25°C ambient temperature.
Compliance includes RoHS3, MSL 1, and REACH Unaffected. This component is suitable for various power management applications where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 48A when measured at the case temperature of 25°C, and 13A when measured at an ambient temperature of 25°C.
The on-resistance is a maximum of 10mOhm at 8A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-Lead package, specifically a 5-DFN (5x6) (8-SOFL) for surface mounting.