| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
160,000 pcs
|
160000 pcs | On Request | 1 | On Request | On Request | 19+18 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C682NLT3G from ON Semiconductor is a single N-Channel MOSFET designed for power applications requiring compact solutions. This device offers a drain-to-source voltage (Vdss) of 60V and a low on-resistance (Rds(on)) of 21mOhm at a test current of 10A and gate-source voltage of 10V. Its gate charge (Qg) is rated at a maximum of 5nC at 10V, contributing to minimized driver losses.
With a continuous drain current capability of 25A at 25°C case temperature, this MOSFET is suitable for various power management tasks. It operates within a wide temperature range of -55°C to 175°C (TJ). The device is housed in a 5-DFN (5x6) package, specifically an 8-PowerTDFN with 5 leads, designed for surface mounting.
Key electrical characteristics include a gate-to-source voltage (Vgs) tolerance of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 16µA. The input capacitance (Ciss) is 410pF at 25V. Power dissipation is rated at 3.5W (ambient) and 28W (case) at 25°C. This MOSFET is built using Metal Oxide technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVMFS5C682NLT3G is 60V.
The maximum on-resistance (Rds(on)) is 21mOhm when tested at 10A and 10V.
The gate charge (Qg) is a maximum of 5nC at 10V.
The continuous drain current is 25A when measured at the case temperature of 25°C.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a 5-DFN (5x6) package, referred to as 8-PowerTDFN with 5 leads.
This MOSFET is designed for surface mounting.