| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
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This N-Channel MOSFET from ON Semiconductor, part number NVMFS5C680NLT1G, is designed for efficient power switching. It offers a drain-to-source voltage (Vdss) of 60V and a maximum on-resistance (Rds On) of 27.5mOhm at 7.5A and 10V gate drive.
The device supports continuous drain currents of 8.1A at 25°C ambient temperature and 21A at 25°C case temperature, with power dissipation ratings of 3.4W (Ta) and 24W (Tc) respectively. It operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6) surface mount configuration, this MOSFET is suitable for compact designs. Its low RDS(on) minimizes conduction losses, and low capacitance helps reduce driver losses, making it a robust choice for various power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The maximum on-resistance is 27.5mOhm at 7.5A and 10V gate drive.
The continuous drain current is 8.1A at 25°C ambient and 21A at 25°C case temperature.
The operating temperature range is -55°C to 175°C.
It is in an 8-PowerTDFN, 5-lead package.
It is a surface mount device.