| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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105,000 pcs
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105000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NVMFS5C677NLWFT1G is a single N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of up to 36A at 25°C case temperature, and 11A at 25°C ambient temperature.
This MOSFET boasts a low Rds On of 15mOhm at 10A and 10V Vgs, minimizing conduction losses. It also offers low gate charge and capacitance, reducing driver losses. The device operates within a wide temperature range of -55°C to 175°C.
Packaged in a compact 5x6mm DFN (SO-8FL) surface-mount package, the NVMFS5C677NLWFT1G is suitable for designs where space is a constraint. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. The device is also Pb-Free and RoHS compliant.
Key electrical characteristics include an input capacitance of 620pF at 25V and a gate charge of 9.7nC at 10V. The datasheet specifies a pulsed drain current of 166A and a source current (body diode) of 31A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
It can handle 36A continuous drain current at 25°C case temperature and 11A at 25°C ambient temperature.
The Rds On (Max) is 15mOhm at 10A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a 5x6mm DFN (SO-8FL) surface-mount package.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.