| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
184 pcs
|
184 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C677NLT1G from ON Semiconductor is a single N-Channel Power MOSFET. It is designed for applications requiring efficient power switching and low conduction losses. This device offers a maximum drain-to-source voltage (Vdss) of 60V and a low on-resistance (Rds(on)) of 15mOhm at a gate-to-source voltage (Vgs) of 10V.
With a continuous drain current rating of 36A at a case temperature of 25°C and 11A at an ambient temperature of 25°C, it is suitable for various power management tasks. The MOSFET operates within a temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6) surface mount package, the NVMFS5C677NLT1G is designed for compact PCB layouts. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, providing efficient switching characteristics. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. It is also Pb-Free and RoHS compliant.
Key electrical characteristics include an input capacitance (Ciss) of 620pF at 25V and a gate charge (Qg) of 9.7nC at 10V, which contribute to minimizing driver losses. The gate-to-source voltage threshold (Vgs(th)) is 2V at 25µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum on-resistance (Rds On) is 15mOhm when tested at 10A drain current and 10V gate-to-source voltage.
The continuous drain current is 36A when measured at the case temperature of 25°C, and 11A when measured at an ambient temperature of 25°C.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead (5x6) package for surface mounting.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.