| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVMFS5C673NT1G is an N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 60V and can handle currents of 14A (ambient) and 50A (case).
Key electrical characteristics include a maximum on-resistance (Rds On) of 10.7mOhm at 7A and 10V gate drive. The gate charge (Qg) is 9.6 nC maximum at 10V, and input capacitance (Ciss) is 680 pF maximum at 30V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN, 5-Lead package and features a surface mount type.
The device utilizes MOSFET (Metal Oxide) technology and has a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.6W (ambient) and 46W (case).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NVMFS5C673NT1G is 60V.
The continuous drain current is 14A (Ta) and 50A (Tc).
The maximum on-resistance (Rds On) is 10.7 mOhm at 7A, 10V.
The maximum gate charge (Qg) is 9.6 nC at 10V.
The maximum input capacitance (Ciss) is 680 pF at 30V.
The operating temperature range is -55°C to 175°C.
The NVMFS5C673NT1G is supplied in an 8-PowerTDFN, 5 Leads package.