| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,500 pcs
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31500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C673NLAFT3G from On Semiconductor is a single N-channel MOSFET designed for power applications requiring compact solutions. It offers a drain-to-source voltage (Vds) of 60V and a continuous drain current (Id) of 50A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds) of 9.2mOhm at 25A and 10V Vgs, minimizing conduction losses. The gate charge (Qg) is 9.5nC at 10V Vgs, and input capacitance (Ciss) is 880pF at 25V Vds, contributing to reduced driver losses.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 46W (Tc) at 25°C. It is housed in a 5-DFN (5x6) package, also known as 8-SOFL, suitable for surface mounting.
The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 60V.
The continuous drain current is 50A at 25°C case temperature.
The on-resistance is a maximum of 9.2mOhm at 25A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a 5-DFN (5x6) package, also known as 8-SOFL.
Yes, the device is RoHS3 Compliant.