| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number NVMFS5C670NWFT1G, is designed for various power applications. It features a maximum drain-source voltage (Vdss) of 60V and can handle continuous currents of 17A when measured at the case temperature (Ta) and 71A at the component temperature (Tc).
The MOSFET exhibits a low maximum on-resistance (Rds On) of 7mOhm at 11A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 14.4nC maximum at 10V and an input capacitance (Ciss) of 1035pF maximum at 30V. The gate threshold voltage (Vgs(th)) is 4V maximum at 53µA, with a maximum gate-source voltage (Vgs) of ±20V.
Operating across a wide temperature range from -55°C to 175°C (TJ), this device is suitable for demanding environments. It is housed in a 5-DFN (5x6) package, specified as 8-PowerTDFN with 5 leads, and features a surface mount type. The power dissipation is rated at 3.6W (Ta) and 61W (Tc).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NVMFS5C670NWFT1G is 60V.
The NVMFS5C670NWFT1G MOSFET has a continuous current rating of 17A at the case temperature (Ta) and 71A at the component temperature (Tc).
The maximum on-resistance (Rds On) for the NVMFS5C670NWFT1G is 7mOhm when measured at 11A drain current and 10V gate-source voltage.
The operating temperature range for the NVMFS5C670NWFT1G is -55°C to 175°C (TJ).
The NVMFS5C670NWFT1G MOSFET is supplied in a 5-DFN (5x6) package, referred to as 8-PowerTDFN with 5 leads, and is a surface mount type.