NVMFS5C670NLAFT1G
On Semiconductor
The On Semiconductor NVMFS5C670NLAFT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a continuous drain current of 17A.
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40,500 pcs
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40500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,751 pcs
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1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFS5C670NLWFAFT1G is an N-Channel MOSFET from ON Semiconductor, designed for efficient power management. It features a maximum drain-to-source voltage of 60V and can handle a continuous drain current of up to 71A at 25°C case temperature, and 17A at 25°C ambient temperature.
This MOSFET boasts a low on-resistance of 6.1mOhm at 35A and 10V, minimizing conduction losses. Its input capacitance is rated at 1400pF at 25V, and gate charge is a maximum of 20nC at 10V, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NVMFS5C670NLWFAFT1G is suitable for compact designs. It is AEC-Q101 qualified and RoHS compliant, making it a reliable choice for various industrial and automotive applications requiring robust power switching performance.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 71A when measured at the case temperature (Tc) of 25°C, and 17A when measured at the ambient temperature (Ta) of 25°C.
The maximum on-resistance is 6.1mOhm when tested at 35A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is from -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, with a supplier package code of 5-DFN (5x6) (8-SOFL).
Yes, the device is RoHS compliant.