NVMFS5C646NLAFT1G The ON Semiconductor NVMFS5C646NLAFT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a low Rds(on) of 4.7mOhm at 10V.
Mfr Part #:

NVMFS5C646NLAFT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS5C646NLAFT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a low Rds(on) of 4.7mOhm at 10V.
✓ Total Stock: 136,405 pcs
$ Price Range: $0.99

NVMFS5C646NLAFT1G Available from 2 distributors

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✓ Non-Authorised
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135,000 pcs
135000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,405 pcs
1405 pcs On Request 1 On Request On Request On Request On Request On Request

NVMFS5C646NLAFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C646NLAFT1G Description

Short technical summary and product information.

The NVMFS5C646NLAFT1G from ON Semiconductor is a high-performance N-Channel MOSFET designed for efficient power management. This device offers a drain-to-source voltage (Vdss) of 60V and a low on-resistance (Rds(on)) of 4.7mOhm at a gate-to-source voltage (Vgs) of 10V, minimizing conduction losses.

 

With a continuous drain current rating of 93A at 25°C case temperature and 20A at 25°C ambient temperature, it is suitable for demanding applications. The MOSFET operates within a wide temperature range of -55°C to 175°C.

 

Packaged in a compact 5x6mm DFN (8-PowerTDFN, 5 Leads) surface-mount package, the NVMFS5C646NLAFT1G is designed for space-constrained applications. Its features include low gate charge and capacitance, contributing to reduced driver losses. The device is AEC-Q101 qualified and RoHS compliant, making it suitable for automotive and industrial applications requiring high reliability.

NVMFS5C646NLAFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C646NLAFT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS5C646NLAFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFS5C646NLAFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C646NLAFT1G Features

  • 60V drain-to-source voltage rating.
  • Low 4.7mOhm Rds(on) at 10V Vgs.
  • High 93A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 Qualified for reliability.

NVMFS5C646NLAFT1G Applications

  • Suitable for high-efficiency power switching.
  • Ideal for compact power supply designs.
  • Used in automotive power management.
  • Applicable in industrial motor control.

NVMFS5C646NLAFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS5C646NLAFT1G?

The maximum drain-to-source voltage is 60V.

What is the Rds(on) of the NVMFS5C646NLAFT1G MOSFET?

The Rds(on) is a maximum of 4.7mOhm at 50A and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 93A at 25°C case temperature and 20A at 25°C ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction temperature ranges from -55°C to 175°C.

What package type is the NVMFS5C646NLAFT1G MOSFET in?

It is in a 5x6mm DFN package, specifically an 8-PowerTDFN with 5 leads.

Is the NVMFS5C646NLAFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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