| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The NVMFS5C645NWFT1G is a single N-Channel MOSFET from On Semiconductor, designed for efficient power management. It operates with a drain-to-source voltage of 60V and offers a low on-resistance of 4.6mOhm at 10V gate-source voltage, minimizing conduction losses.
This MOSFET supports a continuous drain current of up to 92A at 25°C case temperature and 20A at 25°C ambient temperature. Its operating junction temperature ranges from -55°C to 175°C. The device is housed in a compact 5x6mm DFN package, suitable for surface mounting, and features wettable flanks for enhanced optical inspection.
Key electrical characteristics include a gate charge of 20.4 nC and an input capacitance of 1500 pF. The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The on-resistance is a maximum of 4.6mOhm at 50A drain current and 10V gate-source voltage.
The continuous drain current is 92A at 25°C case temperature and 20A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in an 8-PowerTDFN, 5-lead package, designed for surface mounting.