NVMFS5C645NT1G The ON Semiconductor NVMFS5C645NT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-source voltage and a continuous drain current of 92A.
Mfr Part #:

NVMFS5C645NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS5C645NT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-source voltage and a continuous drain current of 92A.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

NVMFS5C645NT1G Available from 1 distributor

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NVMFS5C645NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C645NT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS5C645NT1G is a single N-Channel MOSFET from the Power MOSFET family. It is designed for applications requiring efficient power switching and low conduction losses, featuring a low on-resistance of 4.6mOhm at 50A and 10V gate-source voltage.

 

This MOSFET has a maximum drain-source voltage (Vds) of 60V and a continuous drain current rating of 92A at 25°C case temperature, and 20A at 25°C ambient temperature. The operating temperature range is -55°C to 175°C (TJ).

 

Packaged in an 8-PowerTDFN, 5-Lead (5x6) DFN5/DFNW5 package, it is suitable for surface mounting. The device offers low gate charge and capacitance, minimizing driver losses. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. The device is Pb-Free and RoHS Compliant.

 

Key electrical characteristics include an input capacitance of 1500pF at 25V and a gate charge of 20.4nC at 10V. The thermal resistance from junction to case is 1.9°C/W, and junction to ambient is 41°C/W.

NVMFS5C645NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C645NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS5C645NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFS5C645NT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C645NT1G Features

  • 60V drain-source voltage rating.
  • 92A continuous drain current.
  • Low 4.6mOhm on-resistance.
  • Compact 5x6mm DFN package.
  • AEC-Q101 qualified for automotive.

NVMFS5C645NT1G Applications

  • Suitable for power switching circuits.
  • Ideal for compact electronic designs.
  • Used in automotive applications.
  • Efficient conduction loss minimization.

NVMFS5C645NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMFS5C645NT1G?

The maximum drain-source voltage is 60V.

What is the continuous drain current of the NVMFS5C645NT1G?

The continuous drain current is 92A at 25°C case temperature and 20A at 25°C ambient temperature.

What is the on-resistance of the NVMFS5C645NT1G?

The maximum on-resistance is 4.6mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMFS5C645NT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-Lead (5x6) package.

Is the NVMFS5C645NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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