NVMFS5C645NLAFT1G The On Semiconductor NVMFS5C645NLAFT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a low Rds(on) of 4mOhm.
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NVMFS5C645NLAFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5C645NLAFT1G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a low Rds(on) of 4mOhm.
✓ Total Stock: 1,081 pcs
$ Price Range: $0.99

NVMFS5C645NLAFT1G Available from 1 distributor

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NVMFS5C645NLAFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C645NLAFT1G Description

Short technical summary and product information.

The NVMFS5C645NLAFT1G from On Semiconductor is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current capability of up to 100A at 25°C case temperature.

 

Key electrical characteristics include a low Rds(on) of 4mOhm at 50A and 10V Vgs, and 5.7mOhm at 4.5V Vgs, minimizing conduction losses. The gate charge (Qg) is 34nC at 10V Vgs, and input capacitance (Ciss) is 2200pF at 50V Vds, contributing to reduced driver losses.

 

This MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a compact 5x6mm 8-PowerTDFN, 5-Lead package suitable for surface mounting. The device is AEC-Q101 qualified and RoHS compliant.

 

With its robust specifications, including high current handling and low on-resistance, the NVMFS5C645NLAFT1G is suitable for various power management and switching applications where efficiency and space are critical.

NVMFS5C645NLAFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C645NLAFT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS5C645NLAFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFS5C645NLAFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C645NLAFT1G Features

  • 60V drain-to-source voltage rating.
  • Low Rds(on) of 4mOhm at 10V.
  • High continuous drain current.
  • Compact 5x6mm surface mount package.
  • AEC-Q101 Qualified and RoHS Compliant.

NVMFS5C645NLAFT1G Applications

  • Suitable for power switching applications.
  • Efficient for DC-DC converters.
  • Used in power management circuits.
  • Ideal for compact designs.

NVMFS5C645NLAFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 60 V.

What is the Rds On (Max) at 10V Vgs?

The Rds On (Max) is 4 mOhm at 50A drain current and 10V gate-source voltage.

What is the continuous drain current at 25°C?

The continuous drain current at 25°C case temperature is 100 A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the package type?

The package type is 8-PowerTDFN, 5 Leads, suitable for surface mounting.

Is this product RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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