| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,064 pcs
|
1064 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVMFS5C638NLT1G, is designed for power applications requiring high efficiency and low conduction losses. It boasts a low on-resistance of 3 mOhm at 50A and 10V gate drive, minimizing power dissipation.
The device operates with a drain-to-source voltage of 60V and supports a continuous drain current of up to 133A at the case temperature (Tc) and 26A at the ambient temperature (Ta). Its maximum power dissipation is rated at 100W (Tc) and 4W (Ta).
Packaged in a compact 5x6mm 5-DFN (8-SOFL) surface-mount package, the NVMFS5C638NLT1G is suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 175°C.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2V at 250µA. The input capacitance is 2880 pF at 25V, and the gate charge is 40.7 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 133A at the case temperature and 26A at the ambient temperature.
The maximum on-resistance (Rds(on)) is 3 mOhm at 50A and 10V.
The device is supplied in a 5x6mm 5-DFN (8-SOFL) surface mount package.
The operating junction and storage temperature range is -55°C to +175°C.
Yes, the device is RoHS3 Compliant.