| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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318,070 pcs
|
318070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C604NLAFT1G is a high-performance N-Channel MOSFET manufactured by On Semiconductor. Designed for demanding applications, this device features a robust 60V drain-to-source voltage rating and an impressive continuous drain current capability of 287A at a case temperature of 25°C. Its low on-state resistance (Rds(on)) of 1.2mOhm at 10V gate-source voltage minimizes conduction losses, contributing to overall system efficiency.
This MOSFET is constructed using advanced technology for optimal performance, offering low gate charge and capacitance to reduce driver losses. It operates within a wide temperature range of -55°C to 175°C (TJ), making it suitable for various environmental conditions. The device comes in a compact 5-DFN (5x6) package with wettable flank options for enhanced optical inspection, and it is designed for surface mounting.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2V at 250µA. The input capacitance is rated at 8900pF at 25V, and the gate charge is a maximum of 52nC at 4.5V. With a maximum power dissipation of 200W at 25°C case temperature, the NVMFS5C604NLAFT1G is well-suited for power management applications requiring high current handling and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 287A at a case temperature of 25°C.
The Rds(on) is a maximum of 1.2mOhm at 50A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.