| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
272,600 pcs
|
272600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
34,630 pcs
|
34630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NVMFS5C468NLAFT1G from ON Semiconductor, is designed for efficient power management. It features a maximum drain-to-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 37A at 25°C case temperature, and 13A at 25°C ambient temperature.
The MOSFET boasts a low on-resistance (Rds(on)) of 10.3mOhm at 20A and 10V gate-to-source voltage, minimizing conduction losses. It also offers low gate charge (Qg) and capacitance, contributing to reduced driver losses. The device operates across a wide temperature range from -55°C to 175°C (TJ).
Packaged in a compact 5x6mm 5-DFN (SO-8FL) surface-mount package, the NVMFS5C468NLAFT1G is suitable for space-constrained designs. It is AEC-Q101 qualified and RoHS compliant, making it suitable for automotive and industrial applications requiring high reliability.
Key electrical characteristics include an input capacitance (Ciss) of 570pF at 25V and a gate threshold voltage (Vgs(th)) of 2V at 250µA. The maximum gate-to-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the NVMFS5C468NLAFT1G MOSFET is 40V.
The maximum continuous drain current is 37A at 25°C case temperature and 13A at 25°C ambient temperature.
The Rds On is a maximum of 10.3mOhm at 20A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5 Leads package, specifically a 5-DFN (5x6) (8-SOFL) configuration.