| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The NVMFS5C456NT1G from On Semiconductor is a high-performance N-Channel MOSFET. It features a drain-to-source voltage (Vdss) of 40V and a low maximum on-resistance of 4.5mOhm at 35A and 10V gate-to-source voltage. This device is designed to minimize conduction losses, making it suitable for various power management applications.
With a continuous drain current (Id) rating of 80A at 25°C case temperature and 20A at 25°C ambient temperature, the NVMFS5C456NT1G can handle significant current loads. Its power dissipation capabilities are rated at 55W (Tc) and 3.6W (Ta) at 25°C. The MOSFET operates within a wide temperature range of -55°C to +175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, this MOSFET is ideal for compact designs. It also boasts AEC-Q101 qualification and PPAP capability, indicating its suitability for demanding automotive and industrial applications. The device is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum on-resistance is 4.5mOhm at 35A drain current and 10V gate-to-source voltage.
The continuous drain current is 80A when measured at the case temperature of 25°C, and 20A when measured at an ambient temperature of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
It is in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the device is Pb-free and RoHS compliant.