| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from On Semiconductor, part number NVMFS5C456NLT1G, is designed for power applications requiring efficient switching. It features a maximum drain-to-source voltage of 40V and can handle a continuous drain current of up to 87A at 25°C case temperature.
The device boasts a low on-resistance of 3.7mOhm at 20A and 10V Vgs, minimizing conduction losses. Its low gate charge and capacitance contribute to reduced driver losses. The MOSFET operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount DFN5/DFNW5 package, it is suitable for compact designs. The NVMFS5C456NLT1G is AEC-Q101 qualified and RoHS compliant.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2V at 250µA. The input capacitance is 1600pF at 25V, and the gate charge is 18nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the NVMFS5C456NLT1G is 40V.
The maximum continuous drain current is 87A when the case temperature is 25°C.
The on-resistance (Rds On) is a maximum of 3.7mOhm at 20A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
The MOSFET is supplied in a 5-DFN (5x6) package, specifically an 8-PowerTDFN with 5 leads.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.