| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
190,000 pcs
|
190000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVMFS5C442NWFT3G, is designed for efficient power management.
Key electrical specifications include a 40V drain-to-source voltage (Vdss) and a maximum continuous drain current of 140A at 25°C case temperature. The device exhibits a low on-resistance of 2.3mOhm at 50A and 10V gate-to-source voltage, minimizing conduction losses. Its gate charge (Qg) is 32nC at 10V, contributing to reduced driver losses.
The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in a compact 5x6mm 8-PowerTDFN, 5-lead package, suitable for surface mounting.
Features like AEC-Q101 qualification and PPAP capability indicate its suitability for demanding automotive and industrial applications. The device is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 140A at 25°C case temperature.
The Rds On (Max) is 2.3mOhm at 50A drain current and 10V gate-to-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a 5-DFN (5x6) (8-SOFL) package.
Yes, this device is RoHS3 Compliant.