NVMFS5C442NLAFT1G The On Semiconductor NVMFS5C442NLAFT1G is a 40V N-Channel MOSFET designed for efficient power management. It features a low Rds(on) and a compact DFN package.
Mfr Part #:

NVMFS5C442NLAFT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5C442NLAFT1G is a 40V N-Channel MOSFET designed for efficient power management. It features a low Rds(on) and a compact DFN package.
✓ Total Stock: 76,000 pcs
$ Price Range: $1.60

NVMFS5C442NLAFT1G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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70,500 pcs
70500 pcs On Request 1 On Request On Request 19+18 On Request On Request
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4,500 pcs
4500 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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NVMFS5C442NLAFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C442NLAFT1G Description

Short technical summary and product information.

The NVMFS5C442NLAFT1G is a single N-Channel MOSFET from On Semiconductor, designed for applications requiring efficient power switching. It boasts a drain-to-source voltage of 40V and a continuous drain current capability of up to 130A at case temperature.

 

Key electrical characteristics include a low maximum on-state resistance (Rds(on)) of 2.5mOhm at 10V gate-source voltage, minimizing conduction losses. The device also features low gate charge (Qg) and capacitance, contributing to reduced driver losses. The operating junction temperature range is from -55°C to 175°C.

 

This MOSFET is housed in a compact 5x6mm DFN (DFN5/DFNW5) package, suitable for surface mounting and enabling space-constrained designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. The device is Pb-Free and RoHS Compliant.

 

With a power dissipation rating of 83W at case temperature and 3.7W at ambient temperature, the NVMFS5C442NLAFT1G is well-suited for various power conversion and management tasks.

NVMFS5C442NLAFT1G Quick Information

Product Type: Single MOSFET
Canonical Name: NVMFS5C442NL
Subcategory: Single N-Channel

NVMFS5C442NLAFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS5C442NLAFT1G Estimated Pricing

Qty Low High
1+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C442NLAFT1G Features

  • 40V drain-to-source voltage rating.
  • 130A continuous drain current capability.
  • Low 2.5mOhm Rds(on) at 10V.
  • Compact 5x6mm DFN surface mount package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMFS5C442NLAFT1G Applications

  • Suitable for power management circuits.
  • Ideal for efficient power switching.
  • Used in compact electronic designs.
  • Automotive and industrial applications.

NVMFS5C442NLAFT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS5C442NLAFT1G?

The drain-to-source voltage (Vds) is 40V.

What is the maximum continuous drain current for the NVMFS5C442NLAFT1G?

The continuous drain current (Id) is 130A at case temperature and 29A at ambient temperature.

What is the Rds(on) of the NVMFS5C442NLAFT1G?

The Rds(on) is a maximum of 2.5mOhm at 50A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS5C442NLAFT1G supplied in?

It is supplied in a 5-lead DFN (5x6) package, also known as 8-PowerTDFN.

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