NVMFS5C430NLWFT3G The On Semiconductor NVMFS5C430NLWFT3G is an N-Channel Power MOSFET designed for efficient power management. It offers a 40V drain-source voltage and a continuous drain current of 200A.
Mfr Part #:

NVMFS5C430NLWFT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5C430NLWFT3G is an N-Channel Power MOSFET designed for efficient power management. It offers a 40V drain-source voltage and a continuous drain current of 200A.
✓ Total Stock: 9,407 pcs
$ Price Range: $0.99

NVMFS5C430NLWFT3G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,407 pcs
9407 pcs On Request 1 On Request On Request 1750+ On Request On Request

NVMFS5C430NLWFT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C430NLWFT3G Description

Short technical summary and product information.

The NVMFS5C430NLWFT3G from On Semiconductor is a high-performance N-Channel MOSFET designed for demanding applications. It features a low on-state resistance of 1.5mOhm at 50A and 10V, minimizing conduction losses. With a drain-to-source voltage rating of 40V and a continuous drain current capability of 200A at 25°C case temperature, this MOSFET is suitable for high-power switching applications.

 

This device operates within a wide temperature range of -55°C to 175°C. It is housed in a compact 5x6mm DFN package (8-PowerTDFN, 5 Leads), facilitating space-constrained designs. The MOSFET's low RDS(on) and low gate charge contribute to reduced conduction and switching losses, enhancing overall system efficiency.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2V at 250µA. The input capacitance is rated at 4300pF at 20V, and the gate charge is 70nC at 10V. The device is AEC-Q101 qualified and RoHS compliant, ensuring reliability and adherence to environmental standards.

NVMFS5C430NLWFT3G Quick Information

Product Type: Single MOSFET
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel

NVMFS5C430NLWFT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS5C430NLWFT3G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C430NLWFT3G Features

  • N-Channel MOSFET for efficient power switching.
  • 40V drain-source voltage rating.
  • 200A continuous drain current capability.
  • Low 1.5mOhm Rds(on) at 10V.
  • Compact 5x6mm DFN package.

NVMFS5C430NLWFT3G Applications

  • High-efficiency power supply circuits.
  • Automotive power management systems.
  • DC-DC converters and regulators.
  • Load switching applications.

NVMFS5C430NLWFT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS5C430NLWFT3G?

The drain-to-source voltage (Vds) is 40 V.

What is the maximum continuous drain current for this MOSFET?

The continuous drain current (Id) is 200 A at a case temperature of 25°C.

What is the on-state resistance (Rds(on)) at 10V gate-source voltage?

The maximum on-state resistance (Rds(on)) is 1.5 mOhm at a gate-source voltage of 10V.

What is the operating temperature range for this device?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS5C430NLWFT3G supplied in?

It is supplied in a 5-DFN (5x6) package, also known as 8-PowerTDFN, 5 Leads.

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