| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C430NLWFAFT1G from On Semiconductor is a high-performance N-Channel MOSFET. It is designed with a 40V drain-to-source voltage (Vdss) and features a low on-resistance of 1.4 mOhm at 10V gate-source voltage, minimizing conduction losses.
This MOSFET can handle a continuous drain current of up to 200A when the case temperature is 25°C, and 38A when the ambient temperature is 25°C. Its power dissipation is rated at 110W (Tc=25°C) and 3.8W (Ta=25°C).
The device operates within a wide temperature range of -55°C to 175°C (TJ). It is packaged in an 8-PowerTDFN, 5-lead package with a surface mount type, making it suitable for compact designs. The small footprint of 5x6 mm contributes to space-saving in electronic circuits.
Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 250µA. It also features a low gate charge (Qg) of 70 nC at 10V and an input capacitance (Ciss) of 4300 pF at 20V, which helps minimize driver losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 200A at a case temperature of 25°C and 38A at an ambient temperature of 25°C.
The on-resistance (Rds On) is a maximum of 1.4mOhm when the drain current is 50A and the gate-source voltage is 10V.
The operating junction and storage temperature range is -55°C to +175°C.
This MOSFET is in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) size, designed for surface mounting.
Yes, this device is RoHS Compliant.