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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,500 pcs
|
46500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| On Resistance (Maximum @ @ 10 V) | |
| Operating Temperature | |
| Operating Temperature (Unspecified condition) | |
| Pb-Free | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NVMFS5C426NT3G from ON Semiconductor, is designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage (Vdss) of 40V and a maximum continuous drain current of 235A at 25°C case temperature.
The MOSFET exhibits a low on-resistance (Rds(on)) of 1.3mOhm at 50A and 10V gate-source voltage, minimizing power dissipation during conduction. Its input capacitance (Ciss) is 4300pF at 25V, and gate charge (Qg) is 65nC at 10V, contributing to efficient driver performance.
Packaged in an 8-PowerTDFN, 5-lead (5x6) surface-mount configuration, this device is suitable for compact designs. It operates within a junction temperature range of -55°C to 175°C. The device is AEC-Q101 qualified and RoHS compliant.
Key electrical characteristics include a gate threshold voltage of 3.5V at 250µA. The thermal resistance from junction to case is 1.2°C/W, and junction to ambient is 39°C/W, enabling effective thermal management in various operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 235A at a case temperature of 25°C.
The Rds(on) is a maximum of 1.3mOhm at 50A and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead package for surface mounting.
Yes, the device is RoHS compliant.
The Moisture Sensitivity Level is 1.