NVMFS5C426NT1G The On Semiconductor NVMFS5C426NT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-source voltage and low on-resistance.
Mfr Part #:

NVMFS5C426NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5C426NT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-source voltage and low on-resistance.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NVMFS5C426NT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFS5C426NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C426NT1G Description

Short technical summary and product information.

The NVMFS5C426NT1G from On Semiconductor is a high-performance N-Channel MOSFET. It features a drain-to-source voltage (Vdss) of 40V and a low on-resistance (Rds(on)) of 1.3mOhm at 50A and 10V gate drive. This device is designed for efficient power management, offering a continuous drain current of 235A at 25°C case temperature and a maximum power dissipation of 128W under the same conditions.

 

With a small footprint of 5x6mm, the MOSFET is suitable for compact designs. It operates within a wide temperature range of -55°C to 175°C. The package is an 8-PowerTDFN, 5-lead configuration, designed for surface mounting.

 

Key electrical characteristics include an input capacitance (Ciss) of 4300pF at 25V and a gate charge (Qg) of 65nC at 10V. The gate-to-source voltage (Vgs) maximum is ±20V, with a threshold voltage (Vgs(th)) of 3.5V at 250µA. These specifications make it suitable for various power switching applications.

NVMFS5C426NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C426NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS5C426NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS5C426NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C426NT1G Features

  • 40V drain-to-source voltage.
  • Low 1.3mOhm Rds(on) at 10V.
  • High 235A continuous drain current.
  • Compact 5x6mm DFN package.
  • Wide -55°C to 175°C operating temperature.

NVMFS5C426NT1G Applications

  • Ideal for power switching circuits.
  • Suitable for compact power designs.
  • Used in high current applications.
  • Efficient thermal management.

NVMFS5C426NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS5C426NT1G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-resistance for the NVMFS5C426NT1G?

The maximum on-resistance (Rds On) is 1.3mOhm at 50A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 235A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS5C426NT1G supplied in?

The device is supplied in an 8-PowerTDFN, 5-lead package.

Is the NVMFS5C426NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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