NVMFS5C426NLWFT1G The ON Semiconductor NVMFS5C426NLWFT1G is an N-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 1.2mOhm at 10Vgs. It is designed for compact applications with its 5x6mm DFN package.
Mfr Part #:

NVMFS5C426NLWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS5C426NLWFT1G is an N-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 1.2mOhm at 10Vgs. It is designed for compact applications with its 5x6mm DFN package.
✓ Total Stock: 52,000 pcs
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NVMFS5C426NLWFT1G Available from 1 distributor

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NVMFS5C426NLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C426NLWFT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS5C426NLWFT1G is a high-performance N-Channel MOSFET designed for power management applications. It features a drain-source voltage (Vds) of 40V and a low on-resistance (Rds On) of 1.2mOhm at a gate-source voltage (Vgs) of 10V, minimizing conduction losses.

 

This MOSFET offers a continuous drain current (Id) of up to 237A at the case temperature and 41A at the ambient temperature, making it suitable for high-power designs. Its gate charge (Qg) is 93nC at 10Vgs, and input capacitance (Ciss) is 5600pF at 25Vds, contributing to minimized driver losses.

 

The device operates within a wide temperature range of -55°C to 175°C. It comes in a compact 5x6mm DFN package (8-PowerTDFN, 5 Leads) with surface mount capability, ideal for space-constrained designs. The NVMFS5C426NLWFT1G is AEC-Q101 qualified and RoHS3 compliant.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 250µA and a maximum gate-to-source voltage of ±20V. The device also boasts a high pulsed drain current capability of 1480A.

NVMFS5C426NLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C426NLWFT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS5C426NLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFS5C426NLWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C426NLWFT1G Features

  • 40V drain-source voltage rating.
  • Low 1.2mOhm on-resistance at 10Vgs.
  • High 237A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 Qualified for reliability.

NVMFS5C426NLWFT1G Applications

  • Suitable for high-power switching.
  • Ideal for compact power designs.
  • Used in automotive applications.
  • Efficient conduction loss minimization.

NVMFS5C426NLWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMFS5C426NLWFT1G?

The drain-to-source voltage (Vds) for the NVMFS5C426NLWFT1G is 40V.

What is the maximum on-resistance of the NVMFS5C426NLWFT1G?

The maximum on-resistance (Rds On) is 1.2mOhm at a gate-source voltage of 10V.

What is the continuous drain current rating?

The continuous drain current is 237A at the case temperature and 41A at the ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS5C426NLWFT1G in?

The NVMFS5C426NLWFT1G is in an 8-PowerTDFN, 5-Lead package, designed for surface mounting.

Is the NVMFS5C426NLWFT1G RoHS compliant?

Yes, the NVMFS5C426NLWFT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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