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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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46,500 pcs
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46500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,542 pcs
|
3542 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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2,597 pcs
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2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Continuous Drain Current (Maximum @ TA=100 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=100 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Spacing | |
| Lead Temperature for Soldering Purposes | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ Ta = 100 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C426NAFT1G is an N-Channel MOSFET from On Semiconductor, built on MOSFET (Metal Oxide) technology. It offers a drain-to-source voltage (Vdss) of 40V and a maximum continuous drain current of 235A at a case temperature of 25°C, and 41A at an ambient temperature of 25°C.
This MOSFET boasts a low on-resistance of 1.3mOhm at 50A and 10V gate drive voltage, minimizing conduction losses. Key electrical characteristics include a gate threshold voltage of 3.5V at 250µA, input capacitance of 4300pF at 25V, and a gate charge of 65nC at 10V.
Designed for efficient power management, it has a maximum power dissipation of 128W at the case temperature of 25°C and 3.8W at ambient temperature of 25°C. The operating temperature range is -55°C to 175°C.
The device is housed in an 8-PowerTDFN, 5-Lead package (5-DFN 5x6 8-SOFL) and is suitable for surface mounting. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current is 235A at a case temperature of 25°C and 41A at an ambient temperature of 25°C.
The on-resistance is a maximum of 1.3mOhm at 50A and 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is in an 8-PowerTDFN, 5-Lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, it is RoHS3 Compliant.