| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The ON Semiconductor NVMFS5C423NLAFT1G is a power MOSFET featuring an N-Channel configuration. It is designed for applications requiring a 40V drain-to-source voltage and can handle continuous drain currents of up to 150A at case temperature and 31A at ambient temperature.
This MOSFET boasts a low on-resistance of 2mOhm at 10V gate-source voltage, minimizing conduction losses. Key electrical characteristics include a gate threshold voltage of 2V at 250µA, a maximum gate-to-source voltage of ±20V, and input capacitance of 3100pF at 20V. The gate charge is rated at 50nC at 10V.
With a maximum power dissipation of 83W at case temperature and 3.7W at ambient temperature, it is suitable for demanding thermal environments. The device operates within a wide temperature range of -55°C to 175°C.
The NVMFS5C423NLAFT1G is housed in a compact 8-PowerTDFN, 5-lead package (5-DFN 5x6mm) and utilizes surface mount technology, making it ideal for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The continuous drain current is 31A at ambient temperature and 150A at case temperature.
The maximum on-resistance is 2mOhm at 50A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6mm) size.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.