| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVMFS5C420NWFT1G, is designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage (Vds) of 40V and can handle a continuous drain current (Id) of up to 268A when measured at the case temperature (Tc) of 25°C. The device exhibits a low on-resistance (Rds(on)) of 1.1mOhm at a gate-source voltage (Vgs) of 10V, minimizing power dissipation during operation.
Key electrical characteristics include a gate charge (Qg) of 82 nC at 10V Vgs and an input capacitance (Ciss) of 5340 pF at 20V Vds. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ).
Packaged in an 8-PowerTDFN, 5-lead (5x6) format, this component is designed for surface mounting. Its small footprint makes it suitable for compact designs. The device is AEC-Q101 qualified and RoHS compliant, indicating its suitability for automotive and other demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 40V.
The maximum continuous drain current is 268A at 25°C case temperature and 43A at 25°C ambient temperature.
The Rds On (Max) is 1.1mOhm at 50A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
This MOSFET is supplied in an 8-PowerTDFN, 5-lead package (5x6mm).
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.