| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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283,500 pcs
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283500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from On Semiconductor, part number NVMFS5C410NWFT1G, is designed for power applications requiring high current handling and low conduction losses. It boasts a low on-resistance of 0.92mOhm at a gate-source voltage of 10V and a drain current of 50A, minimizing power dissipation.
The device has a maximum continuous drain current rating of 300A at 25°C case temperature and a drain-to-source voltage of 40V. Its operating junction temperature range is -55°C to +175°C, making it suitable for demanding environments.
Packaged in an 8-PowerTDFN, 5-lead (5x6) package, the NVMFS5C410NWFT1G is designed for surface mounting. This compact footprint is ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and RoHS compliant, ensuring reliability and adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the NVMFS5C410NWFT1G is 40V.
The Rds On (Max) is 0.92mOhm at a drain current of 50A and gate voltage of 10V.
The continuous drain current is 300A at a case temperature of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The NVMFS5C410NWFT1G is supplied in an 8-PowerTDFN, 5-lead (5x6) package for surface mounting.
Yes, the NVMFS5C410NWFT1G is RoHS compliant.