| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C410NWFAFT3G is an N-Channel MOSFET from On Semiconductor, designed for efficient power management. It offers a drain-to-source voltage of 40V and a maximum continuous drain current of 300A when measured at the case temperature.
Key electrical characteristics include a low on-resistance of 0.92mOhm at 50A and 10V gate drive, minimizing conduction losses. The device also features a gate charge of 86nC and an input capacitance of 6100pF, contributing to reduced driver losses.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a compact 5x6 mm, 8-PowerTDFN, 5-lead surface mount package, suitable for space-constrained designs. The device is AEC-Q101 qualified and RoHS compliant.
With its robust specifications, including high current handling and low on-resistance, the NVMFS5C410NWFAFT3G is suitable for various power switching applications where efficiency and thermal performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current is 300A when measured at the case temperature (Tc) and 46A when measured at the ambient temperature (Ta).
The on-resistance is a maximum of 0.92mOhm at a drain current of 50A and a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, this device is RoHS compliant.