Mfr Part #:

NVMFS5C410NLWFET1G

The On Semiconductor NVMFS5C410NLWFET1G is an N-Channel MOSFET with a 40V drain-to-source voltage. It features a low on-resistance and is designed for surface mounting.

✓ Total Stock: 1,500 pcs

$ Price Range: $0.99

NVMFS5C410NLWFET1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,500 pcs On Request	1500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVMFS5C410NLWFET1G Description

Short technical summary and product information.

The NVMFS5C410NLWFET1G from On Semiconductor is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current capability of 50A at 25°C ambient temperature, and up to 330A at 25°C case temperature.

This MOSFET boasts a maximum on-resistance (Rds On) of 0.82mOhm at 50A and 10V gate-source voltage, ensuring efficient power handling. Its maximum power dissipation is rated at 3.8W (Ta) and 167W (Tc). The device operates within a temperature range of -55°C to 175°C (TJ).

Packaged in a 5-DFN (5x6) (8-SOFL) format, the NVMFS5C410NLWFET1G is suitable for surface mounting. It is part of the Automotive AEC-Q101 series, indicating its suitability for automotive applications. The technology employed is MOSFET (Metal Oxide), providing robust performance for demanding circuits.

NVMFS5C410NLWFET1G Quick Information

Product Type: MOSFET

Series: Automotive, AEC-Q101

Canonical Name: NVMFS5C410NLWFET1G N-Channel MOSFET

Subcategory: N-Channel

NVMFS5C410NLWFET1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVMFS5C410NLWFET1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C410NLWFET1G Features

40V drain-to-source voltage rating.
50A continuous drain current capability.
Low 0.82mOhm maximum on-resistance.
Surface mount 5-DFN (5x6) package.
Automotive AEC-Q101 qualified series.

NVMFS5C410NLWFET1G Applications

Suitable for automotive power management.
Used in high-current switching circuits.
Ideal for efficient power conversion.
Designed for compact electronic systems.

NVMFS5C410NLWFET1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating of the NVMFS5C410NLWFET1G?

The drain-to-source voltage rating is 40V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is 50A.

What package does the NVMFS5C410NLWFET1G come in?

It comes in a 5-DFN (5x6) package.

What is the maximum power dissipation at 25°C?

The maximum power dissipation at 25°C is 3.8W.

What is the maximum Rds On value?

The maximum Rds On is 0.82mOhm at 50A, 10V.

What is the operating temperature range?

-55°C to 175°C.

Is the device RoHS compliant?

Yes, it is RoHS3 compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	50A (Ta), 330A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	8862 pF @ 25 V
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs	0.82mOhm @ 50A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA