| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVMFS5C410NLWFAFT1G is a power MOSFET designed for efficient power management applications. This N-Channel device features a maximum drain-to-source voltage of 40V and can handle continuous drain currents of up to 330A at case temperature and 50A at ambient temperature.
Key electrical characteristics include a low Rds(on) of 0.82mOhm at 50A and 10V, minimizing conduction losses. The gate charge (Qg) is 143nC at 10V, and the input capacitance (Ciss) is 8862pF at 25V, contributing to reduced driver losses.
This MOSFET operates within a wide temperature range of -55°C to 175°C. It is housed in a compact 5x6mm 8-PowerTDFN package, suitable for surface mounting. The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 40V.
The continuous drain current is 330A when measured at the case temperature (Tc) of 25°C, and 50A when measured at the ambient temperature (Ta) of 25°C.
The Rds On is a maximum of 0.82mOhm at a drain current of 50A and gate-source voltage of 10V.
The operating junction and storage temperature range is from -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-Lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the NVMFS5C410NLWFAFT1G is AEC-Q101 qualified.
Yes, this device is RoHS3 Compliant.