NVMFS5C406NWFT1G The On Semiconductor NVMFS5C406NWFT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NVMFS5C406NWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5C406NWFT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 43,500 pcs
$ Price Range: $0.99

NVMFS5C406NWFT1G Available from 1 distributor

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NVMFS5C406NWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5C406NWFT1G Description

Short technical summary and product information.

The NVMFS5C406NWFT1G from On Semiconductor is a single N-Channel MOSFET designed for power applications requiring high efficiency and compact size. It features a drain-to-source voltage (Vdss) of 40V and a low on-resistance (Rds(on)) of 0.8mOhm at 50A and 10V gate drive, minimizing conduction losses.

 

This MOSFET boasts a continuous drain current capability of 353A at 25°C case temperature and 52A at 25°C ambient temperature, with a maximum power dissipation of 179W (Tc) and 3.9W (Ta). It operates within a wide temperature range of -55°C to 175°C.

 

The device is housed in a small 5x6mm 8-PowerTDFN, 5-lead package, suitable for surface mounting and enabling compact designs. Its features include low gate charge and capacitance, contributing to minimized driver losses. The NVMFS5C406NWFT1G is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V at 280µA. Input capacitance is rated at 7288 pF at 20V, and gate charge is 110 nC at 10V.

NVMFS5C406NWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5C406NWFT1G N-Channel MOSFET
Subcategory: Single

NVMFS5C406NWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS5C406NWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5C406NWFT1G Features

  • 40V drain-to-source voltage rating.
  • Low 0.8mOhm on-resistance at 50A.
  • High 353A continuous drain current.
  • Compact 5x6mm DFN package.
  • AEC-Q101 qualified for automotive use.

NVMFS5C406NWFT1G Applications

  • Suitable for high-efficiency power switching.
  • Ideal for compact power supply designs.
  • Used in automotive power management.
  • Applicable in industrial motor control.

NVMFS5C406NWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS5C406NWFT1G MOSFET?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-resistance for the NVMFS5C406NWFT1G?

The maximum on-resistance is 0.8mOhm at 50A and 10V gate drive.

What is the continuous drain current rating for the NVMFS5C406NWFT1G?

The continuous drain current is 353A when measured at the case temperature (Tc) of 25°C, and 52A when measured at the ambient temperature (Ta) of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS5C406NWFT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package.

Is the NVMFS5C406NWFT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS5C406NWFT1G?

The Moisture Sensitivity Level is 1.

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