| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
2,156 pcs
|
2156 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5A160PLZWFT1G is a P-Channel MOSFET manufactured by On Semiconductor. This component is designed for power applications, offering a drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of up to 100A at 25°C case temperature.
Key electrical characteristics include a low Rds(on) of 7.7mOhm at 50A and 10V Vgs, minimizing conduction losses. The device operates within a junction temperature range of -55°C to 175°C.
Packaged in a compact 5-DFN (5x6) surface-mount package, the NVMFS5A160PLZWFT1G is suitable for designs where space is a constraint. It is RoHS3 compliant and Pb-Free, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is -60V.
The continuous drain current is 100A at 25°C case temperature and 15A at 25°C ambient temperature.
The Rds(on) is a maximum of 7.7mOhm at 50A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN or 8-SOFL.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.