| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,175 pcs
|
1175 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5A160PLZT1G from On Semiconductor is a P-Channel Power MOSFET. It is designed for applications requiring efficient power switching and conduction. This device offers a maximum drain-source voltage (Vdss) of -60V and a continuous drain current of up to 100A under specific conditions.
The MOSFET exhibits a low on-resistance (Rds(on)) of 7.7mOhm at a gate-source voltage of 10V and a drain current of 50A, minimizing conduction losses. It also features a gate charge (Qg) of 160nC at 10V and an input capacitance (Ciss) of 7700pF at 20V.
Packaged in an 8-PowerTDFN, 5-lead (5x6) footprint, the NVMFS5A160PLZT1G is suitable for surface mounting, enabling compact designs. The operating temperature range is -55°C to 175°C (TJ), and it is AEC-Q101 qualified and PPAP capable, indicating suitability for automotive applications. The device is Pb-free and RoHS compliant.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of -2.6V maximum at 1mA. Power dissipation is rated at 200W (Tc) and 3.8W (Ta). The device also supports a pulsed drain current of up to -400A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NVMFS5A160PLZT1G is -60 V.
The continuous drain current is 100 A at TC = 25°C, Steady State, and 15 A at TA = 25°C, Steady State.
The Rds(on) is a maximum of 7.7mOhm at ID = 50A, VGS = 10V.
The operating junction and storage temperature range is -55°C to +175°C.
The NVMFS5A160PLZT1G is supplied in an 8-PowerTDFN, 5-lead package, suitable for surface mounting.
Yes, the NVMFS5A160PLZT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.