NVMFS5832NLT3G The On Semiconductor NVMFS5832NLT3G is a single N-Channel Power MOSFET designed for efficient power management. It features a 40V drain-to-source voltage and a low Rds(on) of 4.2mOhm.
Mfr Part #:

NVMFS5832NLT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS5832NLT3G is a single N-Channel Power MOSFET designed for efficient power management. It features a 40V drain-to-source voltage and a low Rds(on) of 4.2mOhm.
✓ Total Stock: 105,000 pcs
$ Price Range: $0.99

NVMFS5832NLT3G Available from 1 distributor

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NVMFS5832NLT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5832NLT3G Description

Short technical summary and product information.

The NVMFS5832NLT3G from On Semiconductor is a single N-Channel Power MOSFET. It is designed with a 40V drain-to-source voltage and a low on-resistance of 4.2mOhm at 20A and 10V gate drive.

 

This MOSFET offers a continuous drain current of 21A at 25°C ambient temperature and can dissipate up to 3.7W under the same conditions. When considering case temperature, it can handle up to 120A continuously at 25°C and dissipate 127W.

 

The device features a small footprint, measuring 5x6 mm, making it suitable for compact designs. It operates over a wide temperature range from -55°C to 175°C. The package is a 5-DFN (5x6) with 5 leads, designed for surface mounting.

 

Key electrical characteristics include an input capacitance of 2700pF at 25V and a gate charge of 51nC at 10V. The MOSFET is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.

NVMFS5832NLT3G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5832NLT3G Single N-Channel Power MOSFET

NVMFS5832NLT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFS5832NLT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5832NLT3G Features

  • 40V drain-to-source voltage rating.
  • Low 4.2mOhm Rds(on) at 10V.
  • 21A continuous drain current.
  • Compact 5x6mm 5-DFN package.
  • Wide -55°C to 175°C operating temperature.

NVMFS5832NLT3G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for load management in power supplies
  • Applicable in automotive and industrial electronics

NVMFS5832NLT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS5832NLT3G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 21A at 25°C ambient temperature.

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) is 4.2mOhm at 20A and 10V gate drive.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What type of package does the NVMFS5832NLT3G use?

It uses a 5-DFN (5x6) package with 5 leads, designed for surface mounting.

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