| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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105,000 pcs
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105000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5832NLT3G from On Semiconductor is a single N-Channel Power MOSFET. It is designed with a 40V drain-to-source voltage and a low on-resistance of 4.2mOhm at 20A and 10V gate drive.
This MOSFET offers a continuous drain current of 21A at 25°C ambient temperature and can dissipate up to 3.7W under the same conditions. When considering case temperature, it can handle up to 120A continuously at 25°C and dissipate 127W.
The device features a small footprint, measuring 5x6 mm, making it suitable for compact designs. It operates over a wide temperature range from -55°C to 175°C. The package is a 5-DFN (5x6) with 5 leads, designed for surface mounting.
Key electrical characteristics include an input capacitance of 2700pF at 25V and a gate charge of 51nC at 10V. The MOSFET is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 21A at 25°C ambient temperature.
The Rds On (Max) is 4.2mOhm at 20A and 10V gate drive.
The operating temperature range is -55°C to 175°C.
It uses a 5-DFN (5x6) package with 5 leads, designed for surface mounting.