NVMFS5113PLWFT1G The ON Semiconductor NVMFS5113PLWFT1G is a P-Channel MOSFET designed for power applications. It features a -60V drain-to-source voltage and a low on-resistance of 14mOhm.
Mfr Part #:

NVMFS5113PLWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS5113PLWFT1G is a P-Channel MOSFET designed for power applications. It features a -60V drain-to-source voltage and a low on-resistance of 14mOhm.
✓ Total Stock: 1,100 pcs
$ Price Range: $0.99

NVMFS5113PLWFT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFS5113PLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5113PLWFT1G Description

Short technical summary and product information.

The NVMFS5113PLWFT1G from ON Semiconductor is a P-Channel MOSFET designed for efficient power management. It offers a drain-to-source breakdown voltage of -60V and a low on-resistance of 14mOhm at 17A and 10V gate drive, minimizing conduction losses.

 

This MOSFET boasts a continuous drain current capability of up to 64A at 25°C case temperature and 10A at 25°C ambient temperature. Its operating temperature range is -55°C to 175°C. The device is housed in a compact 5-lead 5-DFN (5x6) package, suitable for surface mounting.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate charge of 83nC at 10V. The input capacitance is rated at 4400pF at 25V. The device also specifies a single pulse drain-to-source avalanche energy of 315mJ.

 

Designed with low conduction losses in mind, this MOSFET is suitable for various power switching applications. It is Pb-free and halogen-free, complying with RoHS standards.

NVMFS5113PLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS5113PLWFT1G P-Channel MOSFET
Subcategory: P-Channel

NVMFS5113PLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFS5113PLWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5113PLWFT1G Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • Low on-resistance of 14mOhm at 17A, 10V.
  • High current capability up to 64A (Tc).
  • Wide operating temperature range: -55°C to 175°C.
  • Compact 5-DFN (5x6) surface mount package.

NVMFS5113PLWFT1G Applications

  • Suitable for power switching circuits.
  • Used in high-efficiency power designs.
  • Ideal for applications requiring low Rds(on).
  • Component for DC-DC converters.

NVMFS5113PLWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage for the NVMFS5113PLWFT1G?

The drain-to-source breakdown voltage is -60V.

What is the maximum on-resistance of the NVMFS5113PLWFT1G?

The maximum on-resistance is 14mOhm at 17A and 10V gate drive.

What is the continuous drain current rating for the NVMFS5113PLWFT1G?

The continuous drain current is 64A at 25°C case temperature and 10A at 25°C ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS5113PLWFT1G MOSFET supplied in?

It is supplied in a 5-lead 5-DFN (5x6) package suitable for surface mounting.

Is the NVMFS5113PLWFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS5113PLWFT1G?

The Moisture Sensitivity Level is 1.

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