NVMFS5113PLT1G The NVMFS5113PLT1G is a P-Channel MOSFET from On Semiconductor. It features a -60V drain-to-source voltage and a low on-resistance of 14 mOhm at 10V gate-source voltage.
Mfr Part #:

NVMFS5113PLT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFS5113PLT1G is a P-Channel MOSFET from On Semiconductor. It features a -60V drain-to-source voltage and a low on-resistance of 14 mOhm at 10V gate-source voltage.
✓ Total Stock: 23,620 pcs
$ Price Range: $0.99

NVMFS5113PLT1G Available from 5 distributors

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✓ Non-Authorised

NVMFS5113PLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS5113PLT1G Description

Short technical summary and product information.

This P-Channel MOSFET, part number NVMFS5113PLT1G from On Semiconductor, is designed for power applications requiring low conduction losses. It offers a drain-to-source voltage of -60V and a maximum continuous drain current of 64A when measured at the case temperature of 25°C.

 

The device exhibits a low on-resistance of 14 mOhm at a gate-source voltage of 10V and a drain current of 17A. Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2.5V at 250µA. The input capacitance is rated at 4400 pF at 25V, and the gate charge is 83 nC at 10V.

 

With a power dissipation capability of 150W at the case temperature of 25°C and 3.8W at an ambient temperature of 25°C, this MOSFET is suitable for various thermal conditions. It operates within a junction temperature range of -55°C to 175°C. The component is housed in an 8-PowerTDFN, 5-lead package, designed for surface mounting.

 

This MOSFET is Pb-Free and Halogen Free, complying with environmental standards. Its high current capability and low RDS(on) make it a suitable choice for power switching and management circuits where efficiency is critical.

NVMFS5113PLT1G Quick Information

Product Type: MOSFET
Series: NVMFS5113PLT1G
Canonical Name: NVMFS5113PLT1G P-Channel MOSFET
Subcategory: P-Channel

NVMFS5113PLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS5113PLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS5113PLT1G Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • Low on-resistance of 14 mOhm at 17A, 10Vgs.
  • High continuous drain current capability of 64A (Tc).
  • Operates from -55°C to 175°C junction temperature.
  • Surface mount 8-PowerTDFN, 5-lead package.

NVMFS5113PLT1G Applications

  • Suitable for power switching applications.
  • Ideal for low conduction loss circuits.
  • Used in power management designs.
  • Efficient for high current applications.

NVMFS5113PLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMFS5113PLT1G MOSFET?

-60 V

What is the maximum continuous drain current for the NVMFS5113PLT1G MOSFET?

64 A (Tc)

What is the on-resistance of the NVMFS5113PLT1G MOSFET?

14 mOhm @ 17A, 10V

What is the operating temperature range for the NVMFS5113PLT1G MOSFET?

-55°C ~ 175°C (TJ)

What type of package is the NVMFS5113PLT1G MOSFET in?

8-PowerTDFN, 5 Leads

Is the NVMFS5113PLT1G MOSFET RoHS compliant?

RoHS3 Compliant

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