NVMFS4C308NWFT1G The On Semiconductor NVMFS4C308NWFT1G is an N-Channel MOSFET with a 30V drain-to-source voltage. It offers low Rds(on) and is suitable for various power applications.
Mfr Part #:

NVMFS4C308NWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS4C308NWFT1G is an N-Channel MOSFET with a 30V drain-to-source voltage. It offers low Rds(on) and is suitable for various power applications.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.99

NVMFS4C308NWFT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFS4C308NWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS4C308NWFT1G Description

Short technical summary and product information.

The NVMFS4C308NWFT1G is an N-Channel MOSFET from On Semiconductor, designed for power applications. It features a 30V drain-to-source voltage (Vdss) and a low on-resistance (Rds(on)) of 4.8mOhm at 10V gate-to-source voltage. The continuous drain current is rated at 55A under specific conditions.

 

This MOSFET is constructed using Trench technology and comes in a 5-lead DFNW5 package with wettable flanks for enhanced optical inspection. It operates over a wide temperature range from -55°C to 175°C.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and an input capacitance of 1670pF at 15V. The gate charge (Qg) is a maximum of 18.2nC at 10V. The device is Pb-free and halogen-free, complying with RoHS standards.

 

Applications include reverse battery protection and DC-DC converter output drivers. The surface mountable package is suitable for automated assembly processes.

NVMFS4C308NWFT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS4C308NWFT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS4C308NWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS4C308NWFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS4C308NWFT1G Features

  • 30V drain-to-source voltage rating.
  • Low 4.8mOhm Rds(on) at 10V.
  • 55A continuous drain current.
  • N-Channel MOSFET technology.
  • DFNW5 package with wettable flanks.

NVMFS4C308NWFT1G Applications

  • Suitable for reverse battery protection circuits.
  • Ideal for DC-DC converter output drivers.
  • Used in power switching applications.
  • Applicable in high-current load switching.
  • Suitable for thermal management in power circuits.

NVMFS4C308NWFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NVMFS4C308NWFT1G?

The drain-to-source voltage (Vdss) is 30V.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 4.8mOhm at 30A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 17.2A at 25°C ambient temperature and 55A at 25°C case temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS4C308NWFT1G supplied in?

The device is supplied in a 5-lead DFNW5 package.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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